03.08.2010 ldm_0808_1000_93.doc 1 of 3 LDM-0808-1000-93 technical data high power infrared laser diode pin connection 1. laserdiode cathode 2. laserdiode anode and photodiode cathode 3. photodiode anode specifications (25c) type LDM-0808-1000-93 unit optical specification cw output power p o 1 w peak wavelength 80810 nm spectral width ? 3.0 nm emitting area 100x1 m wavelength temperature coefficient 0.3 nm/c beam divergence U 40x10 deg polarization te electrical specification slope efficiency e s 1.0 w/a threshold current i th 0.25 a operation current i o 1.2 a operation voltage v f 2.2 v series resistance r d 0.5 ? package style to5 absolute maximum ratings reverse voltage v r 2.0 v operating temperature t o 10 ? 30 c storage temperature t stg -40 ? 85 c features ? cw output power: 1 w ? typical 808 nm emission wavelength ? high-efficiency quantum well structure ? to5 package applications ? solid-state laser pumping ? medical usage ? target designator ? free-space optical communication
03.08.2010 ldm_0808_1000_93.doc 2 of 3 package dimensons to5 package ( unit:mm )
03.08.2010 ldm_0808_1000_93.doc 3 of 3 typical performance curves notes 1. high power laser diodes are high energy la ser devices. it is harmful to human body and health. never look directly into the laser output port. 2. high power laser diodes could operate in forward voltage. the reverse current and voltage should not be higher than 25a and 3v, respectively. 3. heavy humidity can get dew on the ld then damage the ld. 4. the generated heat must be removed in time when the ld working. 5. the high temperature will effect the performance of the products. the lifetime can also be shortened by high temperature. 6. the operating current and optical power of laser must not be higher than the given rate current and power. the excessive current would accelerate aging and shorten lifetime, even damage the ld. 7. the semiconductor laser diode is a sensitive electronic device. please observe precaution for handling electrostatitic sensitive devices.
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